IRF9321TRPBF – Dual N & P-Channel MOSFET in SOIC-8

Description

Technical specifications:

• N-Channel V_DSS: 30V
• P-Channel V_DSS: -30V
• N-Channel R_DS(on): 0.055Ω max @ V_GS = 4.5V
• P-Channel R_DS(on): 0.085Ω max @ V_GS = -4.5V
• Gate threshold voltage: 1.0V–2.5V
• Package: SOIC-8
• Operating temperature: -55°C to +150°C
• Applications: Battery management, load switches, DC-DC converters, power management in portable electronics

Product features:

• Dual MOSFET configuration: Includes one N-channel and one P-channel MOSFET in a single package
• Low R_DS(on): Minimizes conduction losses for higher efficiency
• Fast switching: Reduces switching losses and improves system speed
• SOIC-8 package: Compact footprint for space-constrained designs
• Logic level gate drive: Enables compatibility with low-voltage logic controllers
• High-speed performance: Suitable for high-frequency switching circuits