IRF8714TRPBF – 30V N-Channel HEXFET Power MOSFET

Description

Technical specifications:

• Drain-to-source voltage (V_DSS): 30V
• Continuous drain current (I_D): 90A @ 25°C
• R_DS(on): 1.5mΩ max @ V_GS = 10V
• Gate charge (Q_g): 25nC typical
• Package: DirectFET Medium Can (ML)
• Operating temperature: -55°C to +175°C
• Applications: VRMs, high-efficiency DC-DC converters, graphics cards, servers, and telecom power systems

Product features:

• Ultra-low R_DS(on): 1.5mΩ max for superior conduction efficiency
• High-speed switching: Suitable for high-frequency power conversion
• DirectFET package: Offers excellent thermal performance and compact footprint
• Low gate charge: Minimizes losses in fast-switching applications
• High current handling: Ideal for power-dense and server systems
• Lead-free and RoHS compliant: Environmentally friendly design