IRF640NPBF – 200V N-Channel Power MOSFET

Description

Technical specifications:

• Drain-to-source voltage (V_DSS): 200V
• Continuous drain current (I_D): 18A @ 25°C
• R_DS(on): 0.18Ω max @ V_GS = 10V
• Total gate charge: 67nC typical
• Gate threshold voltage: 2.0V – 4.0V
• Package: TO-220AB
• Operating temperature: -55°C to +175°C
• Applications: SMPS, motor drivers, audio amplifiers, general-purpose switching

Product features:

• High voltage rating: 200V drain-to-source voltage
• High current capability: Continuous drain current up to 18A
• Low R_DS(on): Reduces conduction losses
• Fast switching: Suitable for high-speed switching circuits
• Rugged construction: Avalanche energy rated
• Lead-free and RoHS compliant: Environmentally friendly design