IPW65R080CFD – 650V CoolMOS™ C6 Power Transistor

Description

Technical specifications:

• Transistor type: N-channel MOSFET
• Drain-source voltage (Vds): 650V
• Continuous drain current (Id): 41A
• RDS(on): 0.080Ω at Vgs = 10V
• Gate charge (Qg): 210nC
• Technology: CoolMOS™ C6 Superjunction
• Package type: TO-247
• Power dissipation: 417W
• Operating temperature range: -55°C to +150°C
• Applications: Power factor correction (PFC), switch-mode power supplies (SMPS), industrial power conversion

Product features:

• High voltage capability: 650V drain-source breakdown voltage for robust operation.
• Low RDS(on): Only 0.080Ω for high efficiency and reduced conduction losses.
• CoolMOS™ C6 technology: Optimized for ease-of-use in flyback and PFC designs.
• Fast switching: Low gate charge (Qg) and improved switching speed.
• TO-247 package: Enables high power handling and thermal performance.
• Improved EMI behavior: Soft switching characteristics reduce noise.