FDC6324L – Dual N & P-Channel MOSFET for Power Management

Description

Technical Specifications:

• Type: Dual MOSFET (N-Channel & P-Channel)
• N-Channel Drain-Source Voltage (Vds): 20V
• P-Channel Drain-Source Voltage (Vds): -20V
• N-Channel Continuous Drain Current (Id): 3.5A
• P-Channel Continuous Drain Current (Id): -2.8A
• On-Resistance (Rds On, N-Channel): 0.045Ω (typical)
• On-Resistance (Rds On, P-Channel): 0.065Ω (typical)
• Operating Temperature Range: -55°C to +150°C
• Package Type: SuperSOT-6 (SSOT-6)
• Applications: Ideal for portable electronics, battery-operated devices, power management, and load switching applications.

Product Features:

• Dual MOSFET Design: Integrates both N-Channel and P-Channel MOSFETs for flexible circuit configurations.
• Low On-Resistance (Rds On): Optimized for reduced power loss and high efficiency.
• Fast Switching Speed: Enables efficient operation in high-frequency applications.
• Compact Package: Housed in an ultra-small SuperSOT-6 (SSOT-6) package, perfect for space-constrained designs.
• Low Gate Drive Voltage: Operates efficiently at low voltages, making it suitable for battery-powered devices.
• Robust Thermal Performance: Ensures stable operation under high-power conditions.
• Applications: Load switching, DC-DC converters, battery protection, and portable electronic devices.