FCPF20N60 – N-Channel SuperFET® MOSFET, 600V, 20A

Technical Specifications:

• Type: N-Channel SuperFET® MOSFET
• Drain-Source Voltage (Vds): 600V
• Continuous Drain Current (Id): 20A
• RDS(on): 190mΩ (max), 150mΩ (typical) at Vgs = 10V
• Gate Charge (Qg): 75nC (typical)
• Operating Temperature Range: -55°C to 150°C
• Package Type: TO-220F, 3-pin, through-hole

Product Features:

• High Voltage Capability: Rated at 600V, with a 650V maximum at 150°C junction temperature.
• Low On-Resistance: Typical RDS(on) of 150mΩ for reduced conduction losses.
• High Current Handling: Supports up to 20A continuous drain current.
• Ultra-Low Gate Charge: Typical Qg of 75nC for improved switching efficiency.
• Fast Switching Speed: Enhanced dv/dt performance and low effective output capacitance (165pF typical).
• Robust Design: Avalanche-rated for reliability in high-energy applications.
• Compact Package: Housed in a TO-220F (full-pak) package for isolated mounting and thermal efficiency.