EL827 – 8-Pin DIP Phototransistor Photocoupler

Description

Technical Specifications:

• Emitter: Infrared Emitting Diode
• Detector: Phototransistor
• Collector-Emitter Voltage (VCEO): 80V
• Emitter-Collector Voltage (VECO): 7V
• Collector Current (IC): 50mA
• Power Dissipation:
  • Input: 70mW per channel
  • Output: 150mW per channel
• Operating Temperature Range: -55°C to +110°C
• Storage Temperature Range: -55°C to +125°C
• Soldering Temperature: 260°C for 10 seconds

Product Features:

• Dual Channel Configuration: Two independent channels within a single 8-pin DIP package, optimizing space and functionality.
• High Current Transfer Ratio (CTR): Offers a CTR range of 50% to 600% at IF = 5mA, VCE = 5V, ensuring efficient signal coupling.
• High Isolation Voltage: Provides an isolation voltage of 5000 Vrms between input and output, enhancing safety and performance.
• Compact Package: The small outline package is suitable for space-constrained applications.
• Compliance and Approvals: Pb-free, RoHS compliant, and approved by UL, VDE, SEMKO, NEMKO, DEMKO, FIMKO, CSA, and CQC.