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CY7C1415KV18-250BZI – 18Mbit QDR-II+ High-Speed SRAM Memory

The CY7C1415KV18-250BZI is a high-performance 18Mbit QDR-II+ (Quad Data Rate) SRAM designed for applications requiring high-speed data processing, low latency, and fast memory access. Operating at 250 MHz, this SRAM is ideal for networking, telecommunications, and high-performance computing.

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Categories: Integrated Circuit, Memory

Description
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Description

Technical Specifications:

Memory Density: 18Mbit (1M x 18)
Clock Frequency: Up to 250 MHz
Access Time: 0.45 ns
Burst Length: 2-bit & 4-bit
I/O Voltage: 1.8V
Package: 165-FBGA
Operating Temperature: -40°C to +85°C (Industrial Grade)
Compliance: RoHS, Lead-Free

Product Features:

Memory Type: QDR-II+ (Quad Data Rate) SRAM
Memory Size: 18Mbit (1M x 18)
Operating Frequency: 250 MHz for ultra-fast data processing
Data Rate: 500 MT/s (Million Transfers per Second)
Low Latency: Optimized for high-speed applications
Voltage Supply: 1.8V core voltage for power efficiency
Burst Mode Support: Fixed 4-bit and 2-bit burst operations
Error Correction: Built-in parity checking for data integrity
Package Type: 165-FBGA (Fine-Pitch Ball Grid Array)
RoHS Compliant & Lead-Free

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