BSS84DW-7-F – Dual P-Channel MOSFET, 50V, 130mA

Description

Technical Specifications:

• Transistor Type: Dual P-Channel MOSFET
• Drain-Source Voltage (Vds): -50V
• Continuous Drain Current (Id): -130mA per MOSFET
• Gate Threshold Voltage (Vgs): -0.9V to -2.0V
• On-Resistance (RDS(on)): 10Ω @ Vgs = -10V
• Power Dissipation (Pd): 350mW
• Package Type: SOT-363 (SC-70-6)
• Operating Temperature Range: -55°C to +150°C
• Applications: Load switching, power management, analog signal switching, low-power circuits, and battery-powered devices.

Product Features:

• Dual MOSFET Design: Two P-Channel MOSFETs in a single package for space-saving solutions.
• Low On-Resistance (RDS(on)): Ensures efficient power handling and minimal heat dissipation.
• High Voltage Rating: Supports up to 50V drain-source voltage (Vds).
• Maximum Continuous Drain Current: 130mA per MOSFET.
• Fast Switching Speed: Optimized for high-speed switching applications.
• Low Gate Threshold Voltage: Enables operation with low drive voltage.
• Compact Package: SOT-363 package for space-constrained applications.