BAS21E6433 – High-Speed Switching Diode

Description

Technical specifications:

• Diode type: High-speed switching diode
• Reverse voltage (VR): 250V
• Forward current (IF): 200mA continuous
• Reverse recovery time: 50ns typical
• Forward voltage drop (VF): ~1.25V at 200mA
• Leakage current: ~100nA max at 225V
• Package type: SOT-23
• Operating temperature range: -65°C to +150°C
• Applications: High-speed switching, digital logic protection, clamp circuits, general-purpose switching

Product features:

• Fast switching speed: Enables high-frequency performance with minimal delay.
• Low reverse current: Reduces leakage for enhanced signal integrity.
• High reverse voltage rating: Up to 250V, suitable for robust designs.
• Compact footprint: SOT-23 surface-mount package for space-saving PCB designs.
• Wide temperature range: Operates reliably from -65°C to +150°C.