Description

Technical Specifications:

• Type: Dual N-Channel MOSFET
• Drain-Source Voltage (VDS): 30V
• Continuous Drain Current (ID): 6A per channel
• RDS(on): 22mΩ (typical at VGS = 10V)
• Gate-Source Voltage (VGS): ±20V
• Package: DFN 3x3mm, 8-pin
• Operating Temperature Range: -55°C to +150°C
• Compliance: RoHS and Halogen-Free

Product Features:

• Dual N-Channel MOSFET: Integrated dual MOSFET for compact and efficient design.
• Low RDS(on): Minimizes power loss and improves efficiency.
• High Current Handling: Supports up to 6A continuous drain current per channel.
• Wide Voltage Range: Withstands up to 30V drain-source voltage.
• Fast Switching Speed: Ideal for high-frequency applications.
• Compact Package: Available in a 3x3mm DFN package for space-saving designs.
• RoHS Compliant: Environmentally friendly and lead-free.