IRF2804PBF – 40V, 200A N-Channel HEXFET Power MOSFET

Description

Technical specifications:

• Type: N-Channel Power MOSFET
• Drain-to-source voltage (V_DS): 40V
• Continuous drain current (I_D): 200A @ 25°C
• R_DS(on): 2.0 mΩ max @ V_GS = 10V
• Total gate charge: 170 nC typical
• Gate threshold voltage: 2.0 – 4.0V
• Package: TO-220AB
• Operating temperature range: -55°C to +175°C
• Applications: Automotive electric systems, DC motor drives, low-voltage power supplies, high-current switching

Product features:

• Low R_DS(on): Extremely low 2 mΩ typical for efficient power switching.
• High current capability: Supports up to 200A continuous drain current at 25°C.
• Robust construction: Built with HEXFET® technology for reliability and performance.
• Fast switching: Ideal for high-speed switching and pulsed applications.
• Fully avalanche rated: Ensures safe operation in harsh electrical conditions.
• Lead-free and RoHS compliant: Environmentally friendly design.