FDC6321C – Dual N & P-Channel MOSFET

Description

Technical Specifications:

• Type: Dual MOSFET (N-Channel & P-Channel)
• N-Channel Drain-Source Voltage (Vds): 20V
• P-Channel Drain-Source Voltage (Vds): -20V
• N-Channel Continuous Drain Current (Id): 2.7A
• P-Channel Continuous Drain Current (Id): -2.5A
• On-Resistance (Rds On, N-Channel): 0.045Ω (typical)
• On-Resistance (Rds On, P-Channel): 0.085Ω (typical)
• Operating Temperature Range: -55°C to +150°C
• Package Type: SSOT-6 (SuperSOT-6)
• Applications: Load switching, DC-DC converters, battery protection, power management in portable devices.

Product Features:

• Dual MOSFET Design: Includes both N-Channel and P-Channel MOSFETs for flexible circuit integration.
• Low On-Resistance (Rds On): Reduces power loss and improves efficiency.
• High-Speed Switching: Optimized for fast response in switching applications.
• Compact Package: Housed in an ultra-small SSOT-6 (SuperSOT-6) package for space-saving designs.
• Efficient Thermal Management: Designed for minimal heat dissipation in high-power operations.
• Low Gate Drive Voltage: Operates efficiently with low voltage drive circuits.
• Applications: Ideal for battery management, power switching, DC-DC conversion, and load switching in portable electronics.