FDMC6676BZ – P-Channel PowerTrench® MOSFET, -30V, -14A

Technical Specifications:

• Type: P-Channel PowerTrench® MOSFET
• Drain-Source Voltage (Vds): -30V
• Continuous Drain Current (Id): -14A (at Tc = 25°C)
• RDS(on): 11.2mΩ (typical), 14.5mΩ (max) at Vgs = -10V; 17mΩ (typical), 23mΩ (max) at Vgs = -4.5V
• Gate Charge (Qg): 25nC (typical) at Vgs = -10V
• Power Dissipation: 2.4W (Ta), 36W (Tc)
• Operating Temperature Range: -55°C to 150°C
• Package Type: QFN-8 (Power 33, 3.3×3.3mm), 8-pin, surface-mount

Product Features:

• P-Channel Efficiency: Optimized for negative polarity switching with low RDS(on).
• Ultra-Low On-Resistance: Typical RDS(on) of 11.2mΩ at -10V Vgs, reducing conduction losses.
• High Current Capability: Supports -14A continuous drain current for robust power handling.
• Fast Switching: Low gate charge (25nC typical) ensures rapid response in high-frequency applications.
• Wide Voltage Range: Rated at -30V, ideal for low-voltage power circuits.
• HBM ESD Protection: Rated at 2kV (Human Body Model) for enhanced reliability.
• Compact Package: Housed in a Power 33 QFN-8 (3.3x3.3mm) for space-saving designs.