HUFA76407DK8T – Dual N-Channel UltraFET® MOSFET, 60V, 3.8A

Technical Specifications:

• Type: Dual N-Channel UltraFET® MOSFET
• Drain-Source Voltage (Vds): 60V
• Continuous Drain Current (Id): 3.8A per channel (at Tc = 25°C)
• RDS(on): 90mΩ (typical), 119mΩ (max) at Vgs = 10V
• Gate Charge (Qg): 11nC (typical)
• Power Dissipation: 2.5W (total package)
• Operating Temperature Range: -55°C to 150°C
• Package Type: SOIC-8, 8-pin, surface-mount

Product Features:

• Dual MOSFET Design: Two independent N-Channel MOSFETs in a single package for versatile circuit design.
• Low On-Resistance: Typical RDS(on) of 90mΩ per channel at 10V Vgs, reducing conduction losses.
• Moderate Current Capacity: Handles up to 3.8A per channel (15A peak pulsed).
• Fast Switching: Low gate charge (Qg of 11nC typical) ensures efficient high-frequency operation.
• High Voltage Rating: Supports up to 60V drain-source voltage for robust applications.
• Compact Package: Housed in an SOIC-8 (SO-8) package for surface-mount designs with limited space.
• UltraFET® Technology: Offers superior performance with low RDS(on) and high efficiency.