FQB11N40CTM – N-Channel QFET® MOSFET, 400V, 10.5A

Technical Specifications:

• Type: N-Channel QFET® MOSFET
• Drain-Source Voltage (Vds): 400V
• Continuous Drain Current (Id): 10.5A
• RDS(on): 0.53Ω (max), 0.43Ω (typical) at Vgs = 10V
• Gate Charge (Qg): 28nC (typical)
• Operating Temperature Range: -55°C to 150°C
• Package Type: D2PAK (TO-263), 3-pin, surface-mount

Product Features:

• High Voltage Rating: Supports up to 400V drain-source voltage for versatile applications.
• Low On-Resistance: Typical RDS(on) of 0.43Ω (max 0.53Ω) at 10V gate drive for reduced power loss.
• Moderate Current Capacity: Handles up to 10.5A continuous drain current.
• Low Gate Charge: Typical Qg of 28nC for efficient switching performance.
• Fast Switching: Low Crss (85pF typical) ensures rapid response in high-frequency circuits.
• Robust Design: Built with onsemi’s QFET® planar stripe DMOS technology for high avalanche energy strength.
• Surface-Mount Package: Housed in a compact D2PAK (TO-263) for easy PCB assembly.