CY7C11701KV18-400BZXC – 18-Mbit DDR II+ Synchronous SRAM

Description

Technical Specifications:

• Memory Type: Synchronous SRAM
• Memory Density: 18 Mbit
• Organization: 512K words x 36 bits
• Clock Frequency: Up to 400 MHz
• Data Rate: DDR II+ (data transfer on both clock edges)
• Supply Voltage: 1.7V to 1.9V
• Package: 165-ball Fine-Pitch Ball Grid Array (FBGA)
• Operating Temperature Range: 0°C to 70°C

Product Features:

• High-Speed Performance: Operates at clock speeds up to 400 MHz, ensuring rapid data processing.
• DDR II+ Architecture: Double Data Rate II+ design allows data transfers on both edges of the clock cycle, enhancing throughput.
• 18-Mbit Capacity: Provides ample storage for demanding applications.
• Low Latency: Optimized for applications requiring quick data access and minimal delay.
• 1.8V Operation: Low voltage operation reduces power consumption.
• 165-FBGA Package: Compact and reliable package suitable for surface-mount applications.